- Photon Transport in a Bose-Hubbard Chain of Superconducting Artificial Atoms
G. P. Fedorov et al., Phys. Rev. Lett. 126, 180503 (2021)
- Path-Dependent Supercooling of the
He3 Superfluid A-B Transition
Dmytro Lotnyk et al., Phys. Rev. Lett. 126, 215301 (2021)
- Superconductivity in an extreme strange metal
D. H. Nguyen et al., Nat Commun 12, 4341 (2021)
- High-Q Silicon Nitride Drum Resonators Strongly Coupled to Gates
Xin Zhou et al., Nano Lett. 21, 5738-5744 (2021)
- Measurement of the 229Th isomer energy with a magnetic micro-calorimeter
T. Sikorsky et al., Phys. Rev. Lett. 125 (2020) 142503
Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine LearningB. Severin, et al.
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.