Selected Publications
 

Single, double, and triple quantum dots in Ge/Si nanowires

F. N. M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P. A. M. Bakkers, D. M. Zumbühl, and F. R. Braakman

We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate theability to create single quantum dots of various sizes, with low hole occupation numbers andclearly observable excited states. For the smallest dot size, we observe indications of single-holeoccupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In thedouble quantum dot configuration, we observe Pauli spin blockade. These results open the way toperform hole spin qubit experiments in these devices.


Appl. Phys. Lett. 113, 073102 (2018)

doi: 10.1063/1.5042501